JPS6142984A - 半導体レ−ザの製造方法 - Google Patents

半導体レ−ザの製造方法

Info

Publication number
JPS6142984A
JPS6142984A JP16533184A JP16533184A JPS6142984A JP S6142984 A JPS6142984 A JP S6142984A JP 16533184 A JP16533184 A JP 16533184A JP 16533184 A JP16533184 A JP 16533184A JP S6142984 A JPS6142984 A JP S6142984A
Authority
JP
Japan
Prior art keywords
layer
composition
protection layer
semiconductor substrate
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16533184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0137870B2 (en]
Inventor
Masahito Mushigami
雅人 虫上
Haruo Tanaka
田中　治夫
Hayamizu Fukada
深田　速水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP16533184A priority Critical patent/JPS6142984A/ja
Publication of JPS6142984A publication Critical patent/JPS6142984A/ja
Publication of JPH0137870B2 publication Critical patent/JPH0137870B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP16533184A 1984-08-06 1984-08-06 半導体レ−ザの製造方法 Granted JPS6142984A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16533184A JPS6142984A (ja) 1984-08-06 1984-08-06 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16533184A JPS6142984A (ja) 1984-08-06 1984-08-06 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS6142984A true JPS6142984A (ja) 1986-03-01
JPH0137870B2 JPH0137870B2 (en]) 1989-08-09

Family

ID=15810301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16533184A Granted JPS6142984A (ja) 1984-08-06 1984-08-06 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS6142984A (en])

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6230317A (ja) * 1985-04-02 1987-02-09 Fujitsu Ltd 半導体結晶成長方法及びそれを実施する装置
JPS62141796A (ja) * 1985-12-17 1987-06-25 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS6370587A (ja) * 1986-09-12 1988-03-30 Sharp Corp 半導体レ−ザ
JPS6372173A (ja) * 1986-09-16 1988-04-01 Hitachi Ltd 半導体レ−ザ装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6230317A (ja) * 1985-04-02 1987-02-09 Fujitsu Ltd 半導体結晶成長方法及びそれを実施する装置
JPS62141796A (ja) * 1985-12-17 1987-06-25 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS6370587A (ja) * 1986-09-12 1988-03-30 Sharp Corp 半導体レ−ザ
JPS6372173A (ja) * 1986-09-16 1988-04-01 Hitachi Ltd 半導体レ−ザ装置
US4800565A (en) * 1986-09-16 1989-01-24 Hitachi, Ltd. Semiconductor laser device having high optical intensity and reliability

Also Published As

Publication number Publication date
JPH0137870B2 (en]) 1989-08-09

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term